Charge Transfer in Overlapping Gate Charge-Coupled Devices

A detailed numerical simulation of the free charge trsnrfer in overlapped gate charge-coupled devices (CCD) is presented. The transport dynamics are analyzed in terms of thermal diffusion, self-induced fields, and fringing fields under all the relevant electrodes and the interelectrode regions with time-varying gate potentials. The results of the charge trmwfer with clifferent clocking schemes and clocking waveforms are presented. The dependence of the sta,ges of the charge trsnsf er on the device parameters are discussed in detail. A lumped-circuit model of CCD that could be used to obtain the charge-trsmfer characteristics with various clocking waveforms is also presented.